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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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    Buy cheap Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer from wholesalers
     
    Buy cheap Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer from wholesalers
    • Buy cheap Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer from wholesalers
    • Buy cheap Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer from wholesalers
    • Buy cheap Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer from wholesalers

    Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

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    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : USD10/piece
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 10000 pieces per month
    Delivery Time : 3 working days
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    Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer


    InP Based Epi Wafer


    We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .

    InP Based Epi Wafer Capability

    Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.

    Material CapabilitySubstrateWafer Size
    InP/InPInP waferUp to 4 inch
    InAlAs/InPInP waferrUp to 4 inch
    InGaAs/InPInP waferUp to 4 inch
    InGaAsP/InPInP waferUp to 4 inch
    InGaAs/InGaAsP/InPInP waferUp to 4 inch
    InP/InAlAs/InPInP waferUp to 4 inch

    Optoelectronic applications:

    Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides


    Electronic applications:

    FETs, HBTs, HEMTs, diodes, Microwave devices.


    Epi Layer Structure ( HEMT / HBT )

    GrowthMOCVD
    Dopant sourceP type / Be , N type / Si
    Cap layeri-InP layer
    Active layern-InGaAs layer
    Space layeri-InGaAsP layer
    Buffer layeri-InP layer
    SubstrateØ 2" / Ø 3" / Ø 4" InP wafer
    Quality Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer for sale
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