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Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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    Buy cheap Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED from wholesalers
     
    Buy cheap Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED from wholesalers
    • Buy cheap Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED from wholesalers
    • Buy cheap Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED from wholesalers
    • Buy cheap Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED from wholesalers

    Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED

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    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : USD10/piece
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 10000 pieces per month
    Delivery Time : 3 working days
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    Single Crystal GaP Wafer Gallium Phosphide As Red Yellow And Green LED

    Single Crystal GaP Wafer ( Gallium Phosphide ),widely used as red , yellow , and green LED ( light-emitting diodes )


    We provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , Gallium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method . GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) . We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application . Please contact us for more product information .


    III-V Compound Wafer

    We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .


    Electrical and Doping Specification


    Dopant available S / Zn / Cr / Undoped
    Type of conductivity N / P ,Semi-conducting / Semi-insulating
    Concentration 1E17 - 2E18 cm-3
    Mobility > 100 cm2 / v.s.

    Product Specification

    GrowthLEC
    DiameterØ 2"
    Thickness400 um
    Orientation<100> / <111> / <110> or others
    Off orientationOff 2° to 10°
    SurfaceOne side polished or two sides polished
    Flat optionsEJ or SEMI. Std .
    TTV<= 10 um
    EPD<= 2E5 cm-2
    GradeEpi polished grade / mechanical grade
    PackageSingle wafer container

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