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Brand Name : | ZG |
Model Number : | MS |
Certification : | CE |
Price : | USD10/piece |
Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability : | 10000 pieces per month |
Delivery Time : | 3 working days |
GaSb wafer ( Gallium Antimonide )
We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information .
III-V Compound Wafer
We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .
Electrical and Doping Specification
Product Specification
Growth | LEC |
---|---|
Diameter | Ø 2" / Ø 3" |
Thickness | 500 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Off orientation | Off 2° to 10° |
Surface | One side polished or two sides polished |
Flat options | EJ or SEMI. Std . |
TTV | <= 10 um |
EPD | <= 1000 cm-2 |
Grade | Epi polished grade / mechanical grade |
Package | Single wafer container |
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