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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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    Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers
     
    Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers
    • Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers
    • Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers
    • Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers
    • Buy cheap 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer from wholesalers

    2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

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    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : USD10/piece
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 10000 pieces per month
    Delivery Time : 3 working days
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    2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer


    SOI Wafer ( Silicon-on-Insulator )


    We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .


    SOI Wafer Application


    High-speed ICsHigh-temperature ICs
    Low-power ICsLow-voltage ICs
    Microwave componentsPower device
    MEMSSemiconductor

    Product Specification

    MethodFusion bonding
    DiameterØ 4"/ Ø 6" / Ø 8"
    Device thickness2 um ~ 300 um
    Tolerance+/- 0.5 um ~ 2 um
    Orientation<100> / <111> / <110> or others
    ConductivityP - type / N - type / Intrinsic
    DopantBoron / Phosphorous / Antimony / Arsenic
    Resistivity0.001 ~ 100000 ohm-cm
    Oxide thickness500A ~ 4 um
    Tolerance+/- 5%
    Handle wafer>= 300 um
    SurfaceDouble sides polished
    CoatingOxide and nitride can be supplied on both sides of SOI wafer

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