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SILICON NITRIDE (SI3N4) POURING SPOON & CRUCIBLE USED IN ALUMINUM INDUSTRY

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SILICON NITRIDE (SI3N4) POURING SPOON & CRUCIBLE USED IN ALUMINUM INDUSTRY

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Brand Name :	ZG
Model Number :	MS
Certification :	CE
Price :	Negotiation
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram, MoneyGram
Supply Ability :	10000 pieces per month
Delivery Time :	5-8 working days

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SILICON NITRIDE (SI3N4) POURING SPOON & CRUCIBLE USED IN ALUMINUM INDUSTRY

Silicon Nitride (Si3N4) Pouring Spoon & Crucible

High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.

The domestically pioneered grouting-formed silicon nitride pouring spoon and crucible maximizes the thermal shock resistance and non-stick aluminum properties of silicon nitride materials, and should be the ultimate solution for aluminum industry pouring spoons and crucibles.

Advantage:

Compared with the other material crucible, the service life is greatly extended.

Silicon Nitride Related Data

Main component			99%Al2O3	S-SiC	ZrO2	Si3N4
Main component			99%Al2O3	S-SiC	ZrO2	Si3N4
Physical Property	Density	g/cm3	3.9	3.1	6	3.2
	Water Absorption	%	0	0.1	0	0.1
	Sinter Temperature	°C	1700	2200	1500	1800
Mechanical Property	Rockwell Hardness	HV	1700	2200	1300	1400
	Bend Strength	kgf/mm2	3500	4000	9000	7000
	Compression Intensity	Kgf/mm2	30000	20000	20000	23000
Thermal Property	Maximum working temperature	°C	1500	1600	1300	1400
	thermal expansion coefficient 0-1000°C	/°C	8.0*10-6	4.1*10-6(0-500°C)	9.5*10-6	2.0*10-6(0-500°C)
	thermal expansion coefficient 0-1000°C	/°C	8.0*10-6	5.2*10-6(500-1000°C)	9.5*10-6	4.0*10-6(500-1000°C)
	Thermal Shock resistance	T(°C)	200	250	300	400-500
	Thermal Conductivity	W/m.k(25°C	31	100	3	25
	Thermal Conductivity	300°C)	16	100	3	25
Electrical Property	Resisting rate of Volume	◎.cm
	20°C		>1012	106-108	>1010	>1011
	100°C		1012-1013	–	–	>1011
	300°C		>1012	–	–	>1011
	Insulation Breakdown Intensity	KV/mm	18	semiconductor	9	17.7
	Dielectric Constant (1 MHz)	(E)	10	–	29	7
	Dielectric Dissipation	(tg o)	0.4*10-3	–	–	–

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