Silicon carbide (SiC, SiSiC, SSiC)
Silicon Carbide Ceramics ( SiC, SiSiC, SSiC), advanced industrial
Ceramics
Silicon carbide behaves almost like a diamond. It is not only the
lightest, but also the hardest ceramic material and has excellent
thermal conductivity, low thermal expansion and is very resistant
to acids and lyes.
Basic properties of the material:
| Properties | Brand of material |
| | SCR-Si1 | SCR-Si2-HP | SCR-SSCR-S |
| Composition | SiC+Si | SiC+Si+C | SiC |
| Density, g/sm3 | 3,05-3,07 | 3,00-3,05 | 3,10-3,15 |
| Isolated porosity, % | 0 | 0 | 2 |
| Hardness (at SiC), GPa | 25-30 | 25-30 | 25-30 |
| Flexural strength, MPa | 320-350 | 270-300 | 380-410 |
| Compressive strength, MPa | 3300-3500 | 2800-3100 | 3000-3500 |
| Thermal conductivity at 20-100°С, W/mK | 110-120 | 100-130 | 100-110 |
Coefficient of linear thermal
expansion at 20-1000°С, 10-6 К-1 | 3,4-4,9 | 3,5-5,0 | 3,0-4,6 |
Maximum operating temperature
Oxidative environment
A reducing or inert environment | 1350
1350 | 1350
1350 | 1350
1350 |
The main applications are:
bearings for pumps and compressors;
rings of mechanical seals;
ceramic plungers;
elements of valves and stop valves;
lining for protection from wear and corrosion;
sorting wheels of various grinding machinery;
lining for cyclones and calciners for cement plants;
nozzles;
crucibles, boats;
burners;
furniture and lining of furnaces;
substrates, plates;
products for the metallurgical industry.
Sintered Silicon Carbide Related Data:
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|
Physical
Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 |
Mechanical
Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 |
Thermal
Property | Maximum working
temperature | °C | 1500 | 1600 | 1300 | 1400 |
thermal expansion
coefficient
0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) |
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 |
| 300°C) | 16 | 100 | 3 | 25 |
Electrical
Property | Resisting rate of Volume | ◎.cm | | | | |
| 20°C | >1012 | 106-108 | >1010 | >1011 |
| 100°C | 1012-1013 | – | – | >1011 |
| 300°C | >1012 | – | – | >1011 |
Insulation Breakdown
Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – |
Features:
- high hardness (4th after diamond);
- high thermal conductivity;
- excellent corrosion resistance;
- low coefficient of thermal expansion;
- low density;
- semiconductor properties;
- stability in a wide range of temperatures;
- low friction coefficient.
Product info & Technical Data:
reactively bonded silicon carbide (SCR-Si1, SCR-Si2) There is free
silicon in the composition of the material. This material is
cheaper, but not recommended for alkali applications.
sintered silicon carbide (SCR-S) Pure silicon carbide. More
expensive, but versatile. Recommended for all environments.
