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SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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    Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers
     
    Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers
    • Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers
    • Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers
    • Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers
    • Buy cheap SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY from wholesalers

    SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

    Ask Lasest Price
    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : Negotiation
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 10000 pieces per month
    Delivery Time : 5-8 working days
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    SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY


    Silicon Carbide (SiC) Trays or Plate


    Silicon Carbide (SiC) Trays or plate used as a wafer holder for ICP etching process in LED industry.

    Silicon carbide (SiC) is a has excellent thermal conductivity, corrosion resistance, and with low thermal expansion. Silicon carbide is an excellent material for sealing rings and bearings. Silicon carbide trays have excellent corrosion resistance, great wear resistance, great mechanical strength under high temperatures. We supply many sizes of silicon carbide trays as well as other SiC products.

    Silicon Carbide Trays Properties

    Compound FormulaSiC
    Molecular Weight40.1
    AppearanceBlack
    Melting Point2,730° C (4,946° F) (decomposes)
    Density3.0 to 3.2 g/cm3
    Electrical Resistivity1 to 4 10x Ω-m
    Poisson’s Ratio0.15 to 0.21
    Specific Heat670 to 1180 J/kg-K


    Silicon Carbide Tray Specifications

    TypeRecrystallized SiCSintered SiCReaction Bonded SiC
    Purity of Silicon Carbide99.5%98%>88%
    Max. Working Temp. (`C)165015501300
    Bulk Density (g/cm3)2.73.1>3
    Appearance Porosity<15%2.50.1
    Flexural strength (MPa)110400380
    Compressive strength (MPa)>30022002100
    Thermal expansion (10^-6/`C)4.6 (1200`C)4.0 (<500`C)4.4 (<500`C)
    Thermal conductivity (W/m.K)35~3611065
    Main characteristicsHigh temp. High resistance.
    High purity
    Fracture ToughnessChemical Resistance


    Feature requirement:

    1. Excellent thermal conductivity
    2. Resistant to plasma shock
    3. Good temperature uniformity


    Silicon Carbide Tray Applications

    -Silicon carbide can be applied in areas such as semiconductor and coating.
    -Our silicon carbide trays are widely used in LED industry.

    Packing of Silicon Carbide

    Our Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.



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