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Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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    Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers
     
    Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers
    • Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers
    • Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers
    • Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers
    • Buy cheap Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator from wholesalers

    Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator

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    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : USD10/piece
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 10000 pieces per month
    Delivery Time : 3 working days
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    Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator


    Thermal Oxide Wafer, higher uniformity, and higher dielectric strength , excellent dielectric layer as an insulator


    Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . we provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .


    Thermal Oxide Capability

    Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .

    Oxide thickness rangeOxidation techniqueWithin wafer
    uniformity
    Wafer to wafer
    uniformity
    Surface processed
    100 Å ~ 500Ådry oxide+/- 5%+/- 10%both sides
    600 Å ~ 1000Ådry oxide+/- 5%+/- 10%both sides
    100 nm ~ 300 nmwet oxide+/- 5%+/- 10%both sides
    400 nm ~ 1000 nmwet oxide+/- 3%+/- 5%both sides
    1 um ~ 2 umwet oxide+/- 3%+/- 5%both sides
    3 um ~ 4 umwet oxide+/- 3%+/- 5%both sides
    5 um ~ 6 umwet oxide+/- 3%+/- 5%both sides

    Thermal Oxide Wafer Application


    100 ATunneling Gates
    150 A ~ 500 AGate Oxides
    200 A ~ 500 ALOCOS Pad Oxide
    2000 A ~ 5000 AMasking Oxides
    3000 A ~ 10000 AField Oxides

    Product Specification

    Qxidation techniqueWet oxidation or Dry oxidation
    DiameterØ 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
    Oxide thickness100 A ~ 6 um
    Tolerance+/- 5%
    SurfaceSingle side or double sides oxide layer
    FurnaceHorizontal tube furnace
    GaseHydrogen and Oxygen gases
    Temperature900 C ° - 1200 C °
    Refractive index1.456

    Quality Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator for sale
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